MMBTSC5345
NPN Silicon Epitaxial Planar Transistor
for RF amplifier.
The transistor is subdivided into three groups, R, O
and Y, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25 C)
O
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at V
CE
=6V, I
C
=1mA Current Gain Group
R
O
Y
h
FE
h
FE
h
FE
V
CE(sat)
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
f
T
C
OB
Min.
40
70
120
-
-
-
30
20
4
-
-
-
-
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
S
Value
30
20
4
20
200
150
-55 +150
Unit
V
V
V
mA
mW
O
C
C
O
Typ.
-
-
-
-
-
-
Max.
80
140
240
0.3
0.5
0.5
Unit
-
-
-
V
µA
µA
V
Collector Emitter Saturation Voltage
at I
C
=10mA, I
B
=1mA
Collector Cutoff Current
at V
CB
=30V
Emitter Cutoff Current
at V
EB
=4V
Collector Base Breakdown Voltage
at I
C
=10µA
Collector Emitter Breakdown Voltage
at I
C
=5mA
Emitter Base Breakdown Voltage
at I
E
=10µA
Transition Frequency
at V
CE
=6V, I
E
=-1mA
Output Capacitance
at V
CB
=6V, f=1MHz
-
-
-
V
V
MHz
pF
550
1.4
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/10/2005
MMBTSC5345
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/10/2005
MMBTSC5345
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/10/2005
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