RB501V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• High reliability
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
2
Applications
• Low current rectification
1
S7
Top View
Marking Code: "S7"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
s
Value
45
40
0.1
1
125
- 40 to + 125
Unit
V
V
A
A
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
at I
F
= 10 mA
Reverse Current
at V
R
= 10 V
Capacitance Between Terminals
at V
R
= 10 V, f = 1 MHz
Symbol
V
F
V
F
I
R
C
T
Typ.
-
-
-
6
Max.
0.55
0.34
30
-
Unit
V
V
µA
pF
Note: ESD sensitive product handling required.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
RB501V-40
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
RB501V-40
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
H
E
D
A
E
b
p
UNIT
mm
A
1.10
0.80
b
p
0.40
0.25
C
0.15
0.00
D
1.80
1.60
E
1.35
1.15
H
E
2.80
2.30
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
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