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BYV26B

Description
1 A, 400 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size179KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BYV26B Overview

1 A, 400 V, SILICON, SIGNAL DIODE

BYV26A THRU BYV26E
SUPER FAST RECTIFIERS
Reverse Voltage - 200 to 1000 V
Forward Current - 1 A
Features
• Low cost
• Diffused junction
• Low forward voltage drop
• High current capability
Mechanical Data
• Case: Molded plastic, DO-41
• Lead: Axial leads, solderable per MIL-STD-202,
Method 208
• Polarity: Color band denotes cathode end
• Mounting Position: Any
Maximum Ratings and Electrical Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half-wave, 50 Hz, resistive or inductive load,
for capacitive load, derate current by 20%.
Parameter
Symbols BYV26A BYV26B BYV26C BYV26D BYV26E Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current 0.375"
(9.5 mm) Lead Length at T
A
= 75
O
C
Peak Forward Surge Current 10 ms Single Half Sine
Wave Superimposed on Rated Load at T
J
= 125
O
C
Maximum Forward Voltage at 1 A
Maximum Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time
1)
Typical Junction Capacitance
2)
Typical Thermal Resistance
3)
Operating Junction temperature range
Storage temperature range
1)
2)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
200
140
200
400
280
400
600
420
600
1
30
2.5
5
150
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
T
A
= 25
O
C
T
A
= 100
O
C
I
R
t
rr
C
J
R
θJA
T
j
T
stg
30
45
75
40
100
- 55 to + 150
- 55 to + 150
O
ns
pF
C/W
O
C
C
O
Reverse recovery test conditions: I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A.
Measured at 1 MHz and applied reverse voltage of 4 V D.C.
3)
Thermal resistance from junction to ambient.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/01/2009 B

BYV26B Related Products

BYV26B BYV26A BYV26C BYV26D
Description 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE

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