MMDTC114W
NPN Silicon Epitaxial Planar Digital Transistor
Collector
(Output)
Base
(Input)
R1
R2
Emitter
(Common)
Resistance Values
Type
MMDTC114W
R1 (KΩ)
10
R2 (KΩ)
47
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 5 V, I
C
= 5 mA
Collector Base Cutoff Current
at V
CE
= 50 V
Emitter Base Cutoff Current
at V
EB
= 5 V
Collector Emitter Saturation Voltage
at I
C
= 5 mA, I
B
= 0.25 mA
Input Off Voltage
at V
CE
= 5 V, I
C
= 100 µA
Input On Voltage
at V
CE
= 0.3 V, I
C
= 1 mA
Transition Frequency
at V
CE
= 10 V, -I
E
= 5 mA, f = 100 MHz
Input Resistance
Resistance Ratio
Symbol
h
FE
I
CEO
I
EBO
V
CEsat
V
I(off)
V
I(on)
f
T
R1
R2/R1
Min.
68
-
-
-
-
1.4
-
7
3.7
Typ.
-
-
-
-
-
-
250
10
4.7
Max.
-
500
0.88
0.3
0.3
-
-
13
5.7
Unit
-
nA
mA
V
V
V
MHz
KΩ
-
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
S
Value
50
50
- 6 to + 40
100
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 24/06/2006
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