SMG2309
-3.7A, -30V,R
DS(ON)
75m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
L
A
SC-59
Dim
A
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
The SMG2309 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
The SMG2309 is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
S
2
3
Top View
B
1
B
C
D
D
G
C
H
Drain
Gate
G
H
J
K
Features
* Simple drive requirement
* Small package outline
J
K
L
S
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
Source
D
All Dimension in mm
G
Marking : 2309
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
C
I
DM
P
D
@T
A
=25
C
o
o
o
Ratings
-30
±20
-3.7
-3.0
-12
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W/ C
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a
Ratings
90
o
Unit
C /W
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SMG2309
Elektronische Bauelemente
-3.7A, -30V,R
DS(ON)
75m
Ω
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25
o
C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
o
C
)
Drain-Source Leakage Current (Tj=70
o
C
)
Static Drain-Source On-Resistance
2
2
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
-30
_
Typ.
_
Max.
_
_
Unit
V
V/
o
C
V
nA
uA
uA
Test Condition
V
GS
=0V, I
D
=-250uA
Reference to 25
o
C,I
D
=-1mA
V
DS
=V
GS,
I
D
=-250uA
V
GS
=
±
20V
V
DS
=-30V,V
GS
=0
V
DS
=-24V,V
GS
=0
V
GS
=-10V, I
D
=-3A
V
GS
=-4.5V, I
D
=-2.6A
-0.02
_
_
_
_
_
_
-1.0
_
_
_
_
-3.0
±
100
-1
-25
75
120
8
_
_
R
DS(ON)
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
_
_
_
_
_
_
_
m
Ω
Total Gate Charge
5
1
3
8
5
20
7
412
91
62
5.0
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
2
nC
I
D
=-3A
V
DS
=-24V
V
GS
=-4.5V
_
_
_
_
V
DS
=-15V
I
D
=-1A
nS
V
GS
=-10V
R
G
=3.3
Ω
R
D
=15
Ω
660
_
_
pF
V
GS
=0V
V
DS
=-25V
f=1.0MHz
_
_
S
V
DS
=-10V, I
D
=-3A
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Min.
_
_
Typ.
_
Max.
-1.2
_
Unit
V
Test Condition
I
S
=-1.2A, V
GS
=0V.
Is=3.0A, V
GS
=0
dl/dt=100A/uS
Reverse Recovery Time
2
Trr
Qrr
20
nS
Reverse Recovery Charge
_
15
_
nC
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
4
SMG2309
-3.7A, -30V,R
DS(ON)
75m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
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Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
4
SMG2309
Elektronische Bauelemente
-3.7A, -30V,R
DS(ON)
75m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
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Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
Embedded System
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