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SSD01L60

Description
N-Channel Enhancement Mode Power Mos.FET
File Size667KB,4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

SSD01L60 Overview

N-Channel Enhancement Mode Power Mos.FET

SSD01L60
Elektronische Bauelemente
1A, 600V,R
DS(ON)
12
Ω
N-Channel Enhancement Mode Power Mos.FET
Description
TO-252
The SSD01L60 (TO-252) is universally preferred for all
commercial-industrial surface mount applications and
suited for AC/DC converters.
Features
*
RoHs Compliant
*
Simple Drive Requirement
*
Fast Switching
Speed
*
Repetitive Avalanche Rated
D
REF.
A
B
C
D
E
F
S
G
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
C
=25
C
I
D
@T
C
=100
C
I
DM
P
D
@T
C
=25
C
o
o
o
Ratings
600
±30
1
0.8
3
29
0.232
Unit
V
V
A
A
A
W
W/ C
o
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
2
E
AS
I
AR
E
AR
Tj, Tstg
0.5
1
0.5
-55~+150
mJ
A
mJ
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
Symbol
Max.
Max.
Rthj-c
Rthj-a
Ratings
4.3
110
o
o
Unit
C /W
C /W
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
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