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BAS16WS

Description
0.25 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size263KB,3 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BAS16WS Overview

0.25 A, SILICON, SIGNAL DIODE

BAS16WS
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Fast switching diode
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Peak Reverse Voltage
Forward Current (Continuous)
Non-Repetitive Peak Forward Current
t = 1 µs
t = 1 ms
t=1s
Symbol
V
R
V
RM
I
F
I
FSM
P
tot
T
j
T
stg
Value
75
100
250
2
1
0.5
200
150
- 65 to + 150
Unit
V
V
mA
A
A
A
mW
O
Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Reverse Leakage Current
at V
R
= 75 V
at V
R
= 25 V, T
J
= 150
O
C
at V
R
= 75 V, T
J
= 150
O
C
Diode Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 10 mA, I
R
= 1 mA, R
L
= 100
Symbol
Max.
0.715
0.855
1
1.25
1
30
50
2
6
Unit
V
F
V
I
R
µA
C
tot
t
rr
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009

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