TS10P03GD2G datasheet, PDF - EEWORLD Datasheet

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TS10P03GD2G: DescriptionBridge Rectifier Diode,; CategoryDiscrete semiconductor diode; File Size239KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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TS10P03GD2G Overview

Bridge Rectifier Diode,

TS10P03GD2G Parametric

Parameter Name	Attribute value
package instruction	R-PSFM-T4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	200 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4
Maximum non-repetitive peak forward current	200 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Base Number Matches	1

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TS10P01G thru TS10P07G

Taiwan Semiconductor

CREAT BY ART

FEATURES

- Glass passivated junction

- Ideal for printed circuit board

- Typical IR less than 0.1μA

- High surge current capability

- UL Recognized File # E-326243

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

Glass Passivated Bridge Rectifiers

TS-6P

MECHANICAL DATA

Case:

TS-6P

Molding compound, UL flammability classification rating 94V-0

Packing code with suffix "G" means green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class

whisker test

Polarity:

Polarity as marked on the body

Mounting torque:

8.17 in-lbs maximum

Weight:

7.15 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25°C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Rating for fusing (t<8.3ms)

Maximum instantaneous forward voltage (Note 1)

@5A

@ 10 A

Maximum DC reverse current

at rated DC blocking voltage

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse test with PW=300μs, 1% duty cycle

=25°C

=125°C

SYMBOL

RRM

RMS

F(AV)

FSM

TS10P TS10P TS10P TS10P TS10P TS10P TS10P

01G

02G

100

03G

200

140

200

04G

400

280

400

200

166

1.0

1.1

500

1.4

- 55 to +150

05G

600

420

600

06G

800

560

800

07G

1000

700

1000

UNIT

θJC

STG

°C/W

°C

Document Number: DS_D1411002

Version: I14

TS10P03GD2G Related Products

	TS10P03GD2G	TS10P02GC2	TS10P03GC2	TS10P05GC2	TS10P05GC2G	TS10P06GX0G	TS10P01GC2	TS10P01GC2G	TS10P01GD2G
Description	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,	Bridge Rectifier Diode,
package instruction	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	200 V	100 V	200 V	600 V	600 V	800 V	50 V	50 V	50 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Maximum non-repetitive peak forward current	200 A	200 A	200 A	200 A	200 A	200 A	200 A	200 A	200 A
Number of components	4	4	4	4	4	4	4	4	4
Phase	1	1	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	200 V	100 V	200 V	600 V	600 V	800 V	50 V	50 V	50 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Base Number Matches	1	1	1	1	1	1	-	-	-
Maker	-	-	-	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor

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