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MMBTSB624

Description
PNP Silicon Epitaxial Planar Transistor
File Size146KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
Download Datasheet View All

MMBTSB624 Overview

PNP Silicon Epitaxial Planar Transistor

MMBTSB624
PNP Silicon Epitaxial Planar Transistor
For use in small type equipments, especially
recommended or hybrid circuit and other applications
The transistor is subdivided into five groups A, B, C, D
and E, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
S
Value
30
25
5
700
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 100 mA
Symbol
A
B
C
D
E
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(on)
C
ob
f
T
Min.
110
135
170
200
250
50
-
-
30
25
5
-
0.6
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
17
160
Max.
180
220
270
320
400
-
100
100
-
-
-
0.6
0.7
-
-
Unit
-
-
-
-
-
-
nA
nA
V
V
V
V
V
pF
MHz
at -V
CE
= 1 V, -I
C
= 700 mA
Collector Base Cutoff Current
at -V
CB
= 30 V
Emitter Base Cutoff Current
at -V
EB
= 5 V
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
Collector Emitter Saturation Voltage
at -I
C
= 700 mA, -I
B
= 70 mA
Base Emitter On Voltage
at -V
CE
= 6 V , -I
C
= 10 mA
Output Capacitance
at -V
CB
= 6 V, I
E
= 0, f = 1 MHz
Transition Frequency
at -V
CE
= 6 V, -I
C
= 10 mA
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/11/2007

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