1SS370W
Silicon Epitaxial Planar Diode
For high voltage and high speed switching applications
3
1
2
Marking Code: F5
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Surge Forward Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
F
I
FM
I
FSM
P
D
T
j
T
stg
Value
250
200
100
300
2
100
125
- 55 to + 125
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 10 mA
at I
F
= 100 mA
Reverse Current
at V
R
= 50 V
at V
R
= 200 V
Total Capacitance
at V
R
= 0, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA
Symbol
V
F
V
F
I
R
I
R
C
T
t
rr
Max.
1
1.2
0.1
1
3
60
Unit
V
µA
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/07/2006
1SS370W
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/07/2006
京公网安备 11010802033920号
EEWORLD
