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BAR43S

Description
0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size161KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BAR43S Overview

0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAR43S Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionSOT-23, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRECTANGULAR
Package SizeCHIP CARRIER
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Maximum power consumption limit0.2500 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.1000 A
BAR43 / A / C / S
SCHOTTKY BARRIER DIODE
BAR43
3
BAR43A
3
BAR43C
3
BAR43S
3
1
2
1
2
1
2
1
2
BAR43 Marking Code: RD
BAR43A Marking Code: RE
BAR43C Marking Code: RF
BAR43S Marking Code: RH
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current at (t = 1 s)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
F(AV)
I
FSM
P
tot
R
θJA
T
J
T
S
Value
30
200
750
290
430
150
- 55 to + 150
Unit
V
mA
mA
mW
O
C/W
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 100
μA
Reverse Current
at V
R
= 25 V
Forward Voltage
at I
F
= 2 mA
at I
F
= 15 mA
at I
F
= 100 mA
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
RR
= 1 mA, R
L
= 100
Symbol
V
(BR)R
I
R
Min.
30
-
0.26
-
-
-
Max.
-
500
0.33
0.45
0.8
5
Unit
V
nA
V
F
V
t
rr
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 10/09/2006

BAR43S Related Products

BAR43S BAR43A BAR43 BAR43C
Description 0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, SILICON, SIGNAL DIODE 0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 - 3 3
Number of components 2 - 1 2
state DISCONTINUED - TRANSFERRED ACTIVE
packaging shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package Size CHIP CARRIER - SMALL OUTLINE SMALL OUTLINE
surface mount Yes - Yes Yes
Terminal form GULL WING - GULL WING GULL WING
terminal coating MATTE TIN - TIN LEAD NOT SPECIFIED
Terminal location BOTTOM - DUAL DUAL
Packaging Materials PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship SCHOTTKY - SCHOTTKY SCHOTTKY
structure SERIES CONNECTED, CENTER TAP, 2 ELEMENTS - SINGLE COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON - SILICON SILICON
Diode type SIGNAL DIODE - SIGNAL DIODE SIGNAL DIODE
Maximum reverse recovery time 0.0050 us - 0.0050 us 0.0050 us
Maximum average forward current 0.1000 A - 0.2000 A 0.1000 A
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