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BAS20

Description
0.2 A, 150 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size110KB,1 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BAS20 Overview

0.2 A, 150 V, SILICON, SIGNAL DIODE

BAS20 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionPLASTIC PACKAGE-3
stateCONSULT MFR
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.3500 W
Diode typeSignal diode
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage150 V
Maximum average forward current0.2000 A
BAS19, BAS20, BAS21
HIGH VOLTAGE SWITCHING DIODES
3
BAS19
BAS20
BAS21
Marking Code:
HA
Marking Code:
HB
Marking Code:
HC
1
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Continuous Reverse Voltage
Continuous F
orward Current
Peak Forward Surge Current
Total Device Dissipation FR-5 Board
T
A
=25
O
C
Derate above 25
O
C
1)
2
SOT-23 Plastic Package
Symbol
BAS19
BAS20
BAS21
V
R
I
F
I
FM(surge)
P
D
R
θJA
2)
Value
120
200
250
200
625
225
1.8
556
300
2.4
417
-55 to +150
Min.
-
-
120
200
250
-
-
-
-
-
-
-
-
Max.
1
1.25
-
-
-
0.1
0.1
0.1
100
100
100
5
50
Unit
V
mA
mA
mW
mW/
O
C
O
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate
T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
C/W
P
D
R
θJA
T
J
,T
S
Symbol
V
F
V
F
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
V
(BR)
V
(BR)
V
(BR)
I
R
I
R
I
R
I
R
I
R
I
R
C
d
t
rr
mW
mW/
O
C
O
C/W
O
C
Unit
V
V
V
V
V
µA
µA
µA
µA
µA
µA
pF
ns
Characteristics at T
j
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
at I
F
= 200 mA
Reverse Breakdown Voltage
at I
BR
= 100 µA
at I
BR
= 100 µA
at I
BR
= 100 µA
Reverse Voltage Leakage Current
at V
R
= 100 V
at V
R
= 150 V
at V
R
= 200 V
at V
R
= 100 V, T
J
= 150
O
C
at V
R
= 150 V, T
J
= 150
O
C
at V
R
= 200 V, T
J
= 150
O
C
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 30 mA, I
R(REC)
= 3 mA, R
L
= 100
1)
2)
FR-5=1 x 0.75 x 0.062 in.
Alumina=0.4 x 0.3 x 0.024in.99.5% alumina.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 19/12/2005

BAS20 Related Products

BAS20 BAS19 BAS21
Description 0.2 A, 150 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE SIGNAL DIODE
state CONSULT MFR TRANSFERRED ACTIVE
Diode type Signal diode SIGNAL DIODE Signal diode
Number of terminals 3 3 -
Number of components 1 1 -
Processing package description PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 -
packaging shape Rectangle RECTANGULAR -
Package Size SMALL OUTLINE SMALL OUTLINE -
surface mount Yes Yes -
Terminal form GULL WING GULL WING -
terminal coating NOT SPECIFIED NOT SPECIFIED -
Terminal location pair DUAL -
Packaging Materials Plastic/Epoxy PLASTIC/EPOXY -
structure single SINGLE -
Diode component materials silicon SILICON -
Maximum power consumption limit 0.3500 W 0.3500 W -
Maximum reverse recovery time 0.0500 us 0.0500 us -
Maximum repetitive peak reverse voltage 150 V 100 V -
Maximum average forward current 0.2000 A 0.2000 A -

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