BAV70W
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Fast switching diode
• Ultra small surface mount package
1
3
2
Marking Code:
A4
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Non-Repetitive Peak Reverse Voltage
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
at t = 1 µs
at t = 1 ms
at t = 1 s
Single diode loaded
Double diode loaded
Symbol
V
RM
V
R
I
F
I
FRM
I
FSM
P
tot
T
J
T
s
Value
100
75
175
100
500
4
1
0.5
200
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 100 µA
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Reverse Leakage Current
at V
R
= 25 V
at V
R
= 75 V
at V
R
= 25 V, T
J
= 150
O
C
at V
R
= 75 V, T
J
= 150
O
C
Diode Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 10 mA, I
rr
= 0.1 I
R
, R
L
= 100
Ω
Symbol
V
BR(R)
Min.
75
-
-
-
-
-
-
-
-
-
-
Max.
-
0.715
0.855
1
1.25
30
2.5
60
100
2
4
Unit
V
V
F
V
I
R
nA
µA
µA
µA
pF
ns
C
tot
t
rr
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/05/2007
BAV70W
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/05/2007
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