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BZT03C10

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size239KB,4 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BZT03C10 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

BZT03C…
SILICON Z-DIODES AND TRANSIENT VOLTAGE SUPPRESSORS
Feature
• High maximum operating temperature
• Low Leakage current
• Excellent stability
Mechanical Data
• Case: DO-41 molded plastic
• Epoxy: UL 94V-0 rate flame retardant
• Lead: Axial lead solderable per MIL-STD-202,
method 208 guaranteed
• Polarity: Color band denotes cathode end
• Mounting position: Any
Absolute Maximum Ratings (T
a
= 25
O
C unless otherwise specified)
Parameter
Symbol
Total Power Dissipation
T
tp
= 25
O
C, lead length 10 mm
T
amb
= 45
O
C, PCB mounted
P
tot
P
RSM
P
ZSM
V
F
T
J
T
stg
Value
3.25
1.3
300
600
1.2
- 65 to + 175
- 65 to + 175
Unit
W
W
W
V
O
Non-repetitive Peak Reverse Power Dissipation
(10 / 1000 µs exponential pulse, T
j
= 25
O
C prior to surge)
Non-repetitive Peak Reverse Power Dissipation
(tp = 100 µs, square pulse, T
j
= 25
O
C prior to surge)
Forward Voltage (I
F
= 0.5 A, T
j
= 25
O
C )
Junction Temperature Range
Storage Temperature Range
C
C
O
Thermal Characteristics
Parameter
Thermal Resistance from Junction to Tie-point
(Lead length = 10 mm)
Thermal Resistance from Junction to Ambient
1)
Symbol
R
thj-tp
1)
Value
46
100
Unit
K/W
K/W
R
thj-a
Device mounted on an epoxy-glass printed circuit board, 1.5 mm thick, thickness of Cu-layer
40 µm on an must space
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 06/02/2007 E

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Description 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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