ST60P, ST60S
SILICON SCHOTTKY BARRIER DIODE
Characteristics equivalent to
1N60P and 1N60S
1.9 max
3.9 max
Max. 0.5
Max. 1.9
Min. 27.5
4.5± 1.0
R5 max
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
10.0± 1.0
1.0 max
Min. 27.5
Glass case DO-35-1
Dimensions in mm
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Peak Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
O
I
FM
I
surge
T
j
T
S
Value
45
20
50
150
500
175
- 55 to + 175
Unit
V
V
mA
mA
mA
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Current
at V
F
= 1 V
Reverse Current
at V
R
= 10 V
Junction Capacitance
at f = 1 MHz, V = -1 V
Rectification efficiency
at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz
ST60P
ST60S
Symbol
I
F
I
R
C
η
Min.
4
-
-
-
55
Max.
-
50
100
1
-
Unit
mA
µA
pF
%
20PF
Input 2Vrms
Rectification Efficiency Measurement Circuit
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007
5K
~
~
~
output
Integrated technical exchanges
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