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BAS40WS

Description
0.2 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size293KB,3 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
Download Datasheet View All

BAS40WS Overview

0.2 A, 40 V, SILICON, SIGNAL DIODE

BAS40WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
• Low forward voltage
• Fast switching
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
43
Top View
Marking Code: "43"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Peak Forward Surge Current (at tp = 8.3 ms)
Junction Temperature
Storage Temperature Range
Symbol
V
RRM
V
R
I
F
I
FSM
T
J
T
S
Value
40
40
200
600
150
- 55 to + 150
Unit
V
V
mA
mA
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
at I
F
= 40 mA
Reverse Current
at V
R
= 30 V
Reverse Breakdown Voltage
at I
R
= 10 µA
Reverse Recovery Time
at I
F
= I
R
= 10 mA to I
R
= 1 mA, R
L
= 100
Capacitance
at V
R
= 0 V, f = 1 MHz
Symbol
V
F
V
F
I
R
V
(BR)R
t
rr
C
j
Min.
-
-
-
40
-
-
Max.
0.38
1
200
-
5
5
Unit
V
V
nA
V
ns
pF
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/09/2008

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