BAV199W
LOW LEAKAGE DOUBLE DIODE
For low leakage current applications
3
Feature
• Very low leakage current
• Medium speed switching times
1
2
Marking Code:
JY
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Repetitive Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
at t = 1 µs
at t = 1 ms
at t = 1 s
Single Diode
Double Diode
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
P
d
R
θJA
T
j
, T
stg
Value
85
85
160
140
500
4
1
0.5
250
625
- 65 to + 150
Unit
V
V
mA
mA
A
mW
O
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
C/W
O
C
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 100 µA
Forward Voltage
at I
F
= 1 mA
at I
F
= 10 mA
at I
F
= 50 mA
at I
F
= 150 mA
Reverse Current
at V
R
= 75 V
at V
R
= 75 V, T
j
= 150
O
C
Total Capacitance
at V
R
= 0, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
rr
= 0.1 X I
R
, R
L
= 100
Ω
Symbol
V
(BR)R
Min.
85
-
-
-
-
-
-
-
-
Max.
-
0.9
1
1.1
1.25
5
80
2
3
Unit
V
V
F
V
I
R
I
R
C
T
t
rr
nA
pF
µs
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 25/09/2008
BAV199W
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 25/09/2008
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