BAV200~BAV203
SILICON EPITAXIAL PLANAR DIODES
Switching Diode
LS-34
Applications:
General Purposes
QuadroMELF
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
BAV200
BAV201
BAV202
BAV203
Reverse Voltage
BAV200
BAV201
BAV202
BAV203
Forward Current
Forward Peak Current (at f = 50 Hz)
Peak Forward Surge Current (at t
p
= 1 s)
Junction Temperature
Storage Temperature Range
Symbol
Value
60
120
200
250
50
100
150
200
250
625
1
175
- 65 to + 175
Unit
V
RRM
V
V
R
V
I
F
I
FM
I
FSM
T
j
T
S
mA
mA
A
O
C
C
O
Maximum Thermal Resistance at T
j
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient
at on PC board 50 mm X 50 mm X 1.6 mm
Symbol
R
thJA
Max.
500
Unit
K/W
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2007
BAV200~BAV203
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 50 V
at V
R
= 100 V
at V
R
= 150 V
at V
R
= 200 V
Breakdown Voltage
at I
R
= 100 µA
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
Symbol
V
F
Min.
-
-
-
-
-
60
120
200
250
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
5
1.5
-
Max.
1
100
100
100
100
-
-
-
-
-
-
50
Unit
V
nA
nA
nA
nA
V
V
V
V
Ω
pF
ns
I
R
V
(BR)
Differential Forward Resistance
at I
F
= 10 mA
Capacitance
at V
R
= 0, f = 1MHz
Reverse Recovery Time
at I
F
= 30 mA, I
R
= 30 mA, I
R
= 3 mA, R
L
= 100
Ω
r
f
C
D
t
rr
Characteristics
(T
j
=25°C unless otherwise specified)
1000
1000
I
F
- Forward Current (mA)
I
R
- Reverse Current ( A)
100
Scattering Limit
100
T
j
=25°C
10
10
Scattering Limit
1
0.1
V
R
=V
RRM
1
0.01
0
40
80
120
160
200
0.1
0
0.4
0.8
1.2
1.6
2.0
Tj - Junction Temperature (°C)
Fig 1. Reverse Current vs. Junction
Temperature
V
F
- Forward Voltage (V)
Fig 2. Forward Current vs. Forward
Voltage
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2007
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