BC184 datasheet, PDF - EEWORLD Datasheet

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BC184: Description200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; Categorysemiconductor Discrete semiconductor; File Size119KB，2 Pages; ManufacturerSEMTECH_ELEC; Websitehttp://www.semtech.net.cn

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BC184 Overview

200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC184 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.2000 A
Maximum Collector-Emitter Voltage	30 V
state	ACTIVE
packaging shape	ROUND
Package Size	CYLINDRICAL
Terminal form	WIRE
Terminal location	BOTTOM
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Maximum ambient power consumption	0.3000 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	200
Rated crossover frequency	150 MHz

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BC182…BC184

NPN Silicon Epitaxial Planar Transistor

for general purpose amplifier applications

1. Collector 2. Base 3. Emitter

TO-92 Plastic Package

Absolute Maximum Ratings (T

a

= 25

O

C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

BC182

BC183, BC184

BC182

BC183, BC184

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

T

S

Value

60

45

50

30

6

100

350

150

- 55 to + 150

Unit

V

mA

mW

O

C

O

Characteristics at T

a

= 25

O

C

Parameter

DC Current Gain

at V

CE

= 5 V, I

C

= 10 µA

at V

CE

= 5 V, I

C

= 2 mA

at V

CE

= 5 V, I

C

= 100 mA

Collector Base Cutoff Current

at V

CB

= 50 V

at V

CB

= 30 V

Emitter Base Cutoff Current

at V

EB

= 4 V

Collector Base Breakdown Voltage

at I

C

= 10 µA

Collector Emitter Breakdown Voltage

at I

C

= 2 mA

Emitter Base Breakdown Voltage

at I

E

= 100 µA

BC182, BC183

BC184

BC182

BC183

BC184

BC182, BC183

BC184

BC182

BC183, BC184

Symbol

h

FE

h

FE

h

FE

h

FE

h

FE

h

FE

h

FE

I

CBO

I

EBO

BC182

BC183, BC184

BC182

BC183, BC184

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

Min.

40

100

120

250

80

130

-

60

45

50

30

6

Max.

-

500

800

-

15

-

Unit

-

nA

V

SEMTECH ELECTRONICS LTD.

(Subsidiary

of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

Dated : 27/12/2007

BC184 Related Products

	BC184	BC182	BC183
Description	200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Number of terminals	3	3	3
Maximum collector current	0.2000 A	0.1000 A	0.1000 A
Maximum Collector-Emitter Voltage	30 V	50 V	30 V
state	ACTIVE	Active	DISCONTINUED
packaging shape	ROUND	ROUND	round
Package Size	CYLINDRICAL	CYLINDRICAL	cylindrical
Terminal form	WIRE	THROUGH-HOLE	THROUGH-hole
Terminal location	BOTTOM	BOTTOM	BOTTOM
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	Plastic/Epoxy
structure	SINGLE	SINGLE	single
Number of components	1	1	1
transistor applications	AMPLIFIER	AMPLIFIER	amplifier
Transistor component materials	SILICON	SILICON	silicon
Minimum DC amplification factor	200	80	80
Rated crossover frequency	150 MHz	150 MHz	240 MHz
Transistor polarity	NPN	-	NPN
Maximum ambient power consumption	0.3000 W	-	0.3500 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL	-	Universal small signal
terminal coating	-	TIN LEAD	tin lead

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