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BC237

Description
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
File Size118KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BC237 Overview

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

BC237...BC239
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
The transistor is subdivided into three groups, A, B,
and C, according to its DC current gain.
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
S
BC237
50
45
6
BC238
30
25
5
100
500
150
BC239
30
25
Unit
V
V
V
mA
mW
O
C
C
- 55 to + 150
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 5 V, I
C
= 2 mA
Current Gain Group A
B
C
BC237
BC238, BC239
BC237
BC238, BC239
BC237
BC238, BC239
Symbol
h
FE
h
FE
h
FE
I
CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
Min.
120
180
380
-
-
45
25
6
5
-
-
-
-
0.55
150
-
Max.
220
460
800
15
15
-
-
-
-
0.2
0.6
0.83
1.05
0.7
-
4.5
Unit
-
-
-
nA
V
V
V
Collector Base Cutoff Current
at V
CB
= 50 V
at V
CB
= 30 V
Collector Emitter Breakdown Voltage
at I
C
= 2 mA
Emitter Base Breakdown Voltage
at I
E
= 100 µA
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
Base Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
Base Emitter On Voltage
at V
CE
= 5 V, I
C
= 2 mA
Current Gain Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Collector Base Capacitance
at V
CB
= 10 V, f = 1 MHz
V
BE(sat)
V
BE(on)
f
T
C
ob
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007

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