BC546…BC550
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier application
These transistors are subdivided into three groups A,
B and C according to their current gain.
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
Symbol
V
CBO
Value
80
50
30
65
45
30
6
100
200
500
150
- 65 to + 150
Unit
V
Collector Emitter Voltage
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
S
V
V
mA
mA
mW
O
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 5 V, I
C
= 2 mA
Current Gain Group
A
B
C
Symbol
h
FE
h
FE
h
FE
I
CBO
I
EBO
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
V
(BR)CBO
Min.
110
200
420
-
-
80
50
30
65
45
30
6
Max.
220
450
800
15
100
-
-
-
-
-
-
-
Unit
-
-
-
nA
nA
V
Collector Base Cutoff Current
at V
CB
= 30 V
Emitter Base Cutoff Current
at V
EB
= 5 V
Collector Base Breakdown Voltage
at I
C
= 100 µA
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
Emitter Base Breakdown Voltage
at I
E
= 10 µA
V
(BR)CEO
V
(BR)EBO
V
V
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
BC546…BC550
Characteristics at T
a
= 25
O
C
Parameter
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
Base Emitter On Voltage
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 10 mA
Transition Frequency
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Collector Base Capacitance
at V
CB
= 10 V, f = 1 MHz
Symbol
V
CE(sat)
Min.
-
-
0.55
-
100
-
Max.
0.25
0.6
0.7
0.77
-
6
Unit
V
V
BE(on)
f
T
C
cb
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
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