BC556…BC560
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
These transistors are subdivided into three groups A,
B and C according to their current gain.
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
BC556
BC557, BC560
BC558, BC559
BC556
BC557, BC560
BC558, BC559
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Symbol
-V
CBO
Value
80
50
30
65
45
30
5
100
200
500
150
- 65 to + 150
Unit
V
Collector Emitter Voltage
-V
CEO
-V
EBO
-I
C
-I
CM
P
tot
T
j
T
S
V
V
mA
mA
mW
O
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 5 V, -I
C
= 2 mA
Current Gain Group
A
B
C
Symbol
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
BC556
BC557, BC560
BC558, BC559
BC556
BC557, BC560
BC558, BC559
-V
(BR)CBO
Min.
110
200
420
-
-
80
50
30
65
45
30
5
Max.
220
450
800
15
100
-
-
-
-
-
-
-
Unit
-
-
-
nA
nA
V
Collector Base Cutoff Current
at -V
CB
= 30 V
Emitter Base Cutoff Current
at -V
EB
= 5 V
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 2 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
-V
(BR)CEO
-V
(BR)EBO
V
V
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
BC556…BC560
Characteristics at T
a
= 25
O
C
Parameter
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 0.5 mA
at -I
C
= 100 mA, -I
B
= 5 mA
Base Emitter On Voltage
at -V
CE
= 5 V, -I
C
= 2 mA
at -V
CE
= 5 V, -I
C
= 10 mA
Transition Frequency
at -V
CE
= 5 V, -I
C
= 10 mA, f = 100 MHz
Collector Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
Symbol
-V
CE(sat)
Min.
-
-
0.55
-
100
-
Max.
0.3
0.65
0.75
0.82
-
6
Unit
V
-V
BE(on)
f
T
C
cb
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
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