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8EWS10S

Description
8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-252AA
CategoryDiscrete semiconductor    diode   
File Size200KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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8EWS10S Overview

8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-252AA

8EWS10S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current50 µA
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin I2108 rev. G 08/00
SAFE
IR
Series
8EWS..S
SURFACE MOUNTABLE
INPUT RECTIFIER DIODE
Description/Features
The 8EWS..S rectifier
SAFE
IR
series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation technology
used has reliable operation up to 150° C junction
temperature.
The
High Reverse Voltage
range available allows
design of input stage primary rectification with
Outstanding Voltage Surge
capability.
Typical applications are in input rectification and these
products are designed to be used with International
Rectifier Switches and Output Rectifiers which are
available in identical package outlines.
V
F
< 1V @ 5A
I
FSM
= 200A
V
RRM
800 to 1200V
Output Current in Typical Applications
Applications
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, R
thCA
= 15°C/W
Aluminum IMS with heatsink, R
thCA
= 5°C/W
T
A
= 55°C, T
J
= 125°C, footprint 300mm
2
Single-phase Bridge
1.2
2.5
5.5
Three-phase Bridge
1.6
2.8
6.5
Units
A
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal
waveform
V
RRM
Range (*)
I
FSM
V
F
T
J
@ 5A, T
J
= 25°C
Package Outline
Units
A
V
A
V
°C
8EWS..S
8
800 to 1200
200
1.0
- 55 to 150
TO-252AA (D-Pak)
(*)
for higher voltage up to 1600V contact factory
1

8EWS10S Related Products

8EWS10S 8EWS08S 8EWS12S
Description 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-252AA 10 A, 800 V, SILICON, RECTIFIER DIODE, TO-252AA 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA
Is it Rohs certified? incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-252AA TO-252AA TO-252AA
package instruction R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Contacts 3 3 3
Reach Compliance Code compli compli compli
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V
JEDEC-95 code TO-252AA TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0 e0
Humidity sensitivity level 1 1 1
Maximum non-repetitive peak forward current 200 A 200 A 200 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum output current 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245 245 245
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 800 V 1200 V
Maximum reverse current 50 µA 50 µA 50 µA
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30
Base Number Matches 1 1 1
ECCN code EAR99 - EAR99
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