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BB813

Description
Variable Capacitance Diode, 10pF C(T), 30V, Silicon
CategoryDiscrete semiconductor    diode   
File Size31KB,2 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BB813 Overview

Variable Capacitance Diode, 10pF C(T), 30V, Silicon

BB813 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSINGLE
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.02 µA
Reverse test voltage30 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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