AP9575GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-60V
90mΩ
-15A
Description
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9575GJ) is
available for low-profile applications.
G
D
S
G D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
+25
-15
-9.5
-45
31.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
4.0
62.5
110
Units
℃/W
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1
200902093
AP9575GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-12A
V
GS
=-4.5V, I
D
=-9A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-9A
V
DS
=-60V, V
GS
=0V
V
GS
= +25V, V
DS
=0V
I
D
=-9A
V
DS
=-48V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-9A
R
G
=3.3Ω,V
GS
=-10V
R
D
=3.3Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-60
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
14
-
-
-
14
3
8
8
17
36
41
115
90
Max. Units
-
90
120
-3
-
-10
-250
+100
27
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=-48V, V
GS
=0V
1100 2660
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-9A, V
GS
=0V
I
S
=-9A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
38
61
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9575GH/J
50
40
T
C
=25
o
C
40
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
T
C
=150
o
C
30
-10V
-7.0V
-5.0V
-4.5V
30
20
20
10
10
V
G
=-3.0V
V
G
=-3.0V
0
0
0
2
4
6
8
10
0
2
4
6
8
10
12
14
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
I
D
= -9 A
T
C
=25
℃
90
1.8
I
D
= - 12 A
V
G
= -10V
1.6
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(m
Ω
)
1.4
80
1.2
1.0
70
0.8
0.6
60
0.4
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10.0
1.4
Normalized -V
GS(th)
(V)
1.4
8.0
1.2
6.0
-I
S
(A)
1.0
4.0
T
j
=150 C
o
T
j
=25 C
o
0.8
2.0
0.6
0.0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9575GH/J
12
10000
f=1.0MHz
I
D
= -9A
V
DS
= -48V
-V
GS
, Gate to Source Voltage (V)
10
8
1000
C
iss
6
C (pF)
4
100
C
oss
C
rss
2
0
0
10
20
30
40
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
10
100us
1ms
10ms
0.2
-I
D
(A)
0.1
0.1
0.05
P
DM
1
100ms
DC
T
C
=25 C
Single Pulse
o
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0.1
0.1
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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