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BY609

Description
DIODE 0.004 A, 15000 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size59KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BY609 Overview

DIODE 0.004 A, 15000 V, SILICON, SIGNAL DIODE, Signal Diode

BY609 Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)50 V
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature120 °C
Maximum output current0.004 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15000 V
Maximum reverse recovery time0.2 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

BY609 Related Products

BY609 BY610
Description DIODE 0.004 A, 15000 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 0.004 A, 17000 V, SILICON, SIGNAL DIODE, Signal Diode
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Other features LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LALF-W2 O-LALF-W2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 120 °C 120 °C
Maximum output current 0.004 A 0.004 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 15000 V 17000 V
Maximum reverse recovery time 0.2 µs 0.2 µs
surface mount NO NO
technology AVALANCHE AVALANCHE
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL

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