S-2812AFE-150 datasheet, PDF - EEWORLD Datasheet

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S-2812AFE-150: Description2KX8 EEPROM 3V, 200ns, PDSO28, SOP-28; Categorystorage storage; File Size876KB，18 Pages; ManufacturerSeiko Epson Corporation

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S-2812AFE-150 Overview

2KX8 EEPROM 3V, 200ns, PDSO28, SOP-28

S-2812AFE-150 Parametric

Parameter Name	Attribute value
Parts packaging code	SOIC
package instruction	SOP,
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	200 ns
Other features	DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES
Data retention time - minimum	10
JESD-30 code	R-PDSO-G28
length	18.3 mm
memory density	16384 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	3 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	8.4 mm
Base Number Matches	1

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S-2812AFE-150 Related Products

	S-2812AFE-150	S-2812ATF-150	S-2817ADP-150	S-2812ACA-150
Description	2KX8 EEPROM 3V, 200ns, PDSO28, SOP-28	2KX8 EEPROM 3V, 200ns, PDSO28, TSOP-28	2KX8 EEPROM 5V, 200ns, PDIP28, DIP-28	2KX8 EEPROM 3V, 200ns, UUC25, DIE
Parts packaging code	SOIC	TSOP	DIP	DIE
package instruction	SOP,	TSOP1,	DIP,	DIE,
Contacts	28	28	28	25
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum access time	200 ns	200 ns	200 ns	200 ns
Other features	DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES	DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES	DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES	DATA RETENTION = 10 YEARS; 100000 ERASE/WRITE CYCLES
Data retention time - minimum	10	10	10	10
JESD-30 code	R-PDSO-G28	R-PDSO-G28	R-PDIP-T28	R-XUUC-N25
memory density	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of terminals	28	28	28	25
word count	2048 words	2048 words	2048 words	2048 words
character code	2000	2000	2000	2000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	2KX8	2KX8	2KX8	2KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	UNSPECIFIED
encapsulated code	SOP	TSOP1	DIP	DIE
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	IN-LINE	UNCASED CHIP
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	3 V	3 V	5 V	3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	4.5 V	2.7 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	YES	YES	NO	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	NO LEAD
Terminal location	DUAL	DUAL	DUAL	UPPER
length	18.3 mm	11.8 mm	35.6 mm	-
Output characteristics	3-STATE	3-STATE	-	3-STATE
Maximum seat height	3 mm	1.2 mm	5.7 mm	-
Terminal pitch	1.27 mm	0.55 mm	2.54 mm	-
width	8.4 mm	8 mm	15.24 mm	-
Base Number Matches	1	1	1	-

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