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1N4532

Description
0.125 A, SILICON, SIGNAL DIODE, DO-34
CategoryDiscrete semiconductor    diode   
File Size20KB,2 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
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1N4532 Overview

0.125 A, SILICON, SIGNAL DIODE, DO-34

1N4532 Parametric

Parameter NameAttribute value
MakerSynSemi
Reach Compliance Codeunknow
1N4531 ~ 1N4532
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 75 V
• Repetitive peak reverse voltage:max. 75 V
• Repetitive peak forward current:max. 450 mA.
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODES
DO - 34 Glass
0.063 (1.6 )max.
1.00 (25.4)
min.
Cathode
Mark
0.119 (3.04)
max.
0.022 (0.55)max.
MECHANICAL DATA :
Case:
DO-34 Glass Case
Weight:
approx. 0.11g
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Repetitive Peak Forward Current
Maximum Power Dissipation
(1)
Maximum Surge Forward Current at t < 1s, Tj = 25
°C
Maximum Junction Temperature
Storage Temperature Range
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
V
RM
I
F
I
FRM
P
D
I
FSM
T
J
T
S
Value
75
75
200
450
500
0.5
200
-65 to + 200
Unit
V
V
mA
mA
mW
A
°C
°C
Electrical Characteristics
(Tj = 25°C unless otherwise noted)
Parameter
1N4531
Reverse Current
1N4532
Forward Voltage
Diode Capacitance
V
F
1N4531
1N4532
1N4531
1N4532
Cd
I
R
Symbol
Test Condition
V
R
= 20 V
V
R
= 20 V , Tj = 150
°C
V
R
= 50 V
V
R
= 50 V , Tj = 150
°C
I
F
= 10 mA
f = 1MHz ; V
R
= 0
I
F
= 10 mA to I
R
= 60mA
R
L
= 100
; Measured
at I
R
= 1 mA
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
Max
25
5
100
100
1
4.0
2.0
4
2
Unit
nA
µA
nA
µA
V
pF
Reverse Recovery Time
Trr
ns
ns
Page 1 of 2
Rev. 02 : March 25, 2005

1N4532 Related Products

1N4532 1N4531
Description 0.125 A, SILICON, SIGNAL DIODE, DO-34 0.125 A, SILICON, SIGNAL DIODE, DO-34
Maker SynSemi SynSemi
Reach Compliance Code unknow unknown
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