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HER801R

Description
Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, TO-220A, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size25KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance  
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HER801R Overview

Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, TO-220A, 2 PIN

HER801R Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AC
package instructionTO-220A, 2 PIN
Contacts3
Reach Compliance Codecompliant
Other featuresLOW NOISE
applicationEFFICIENCY
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)265
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse current10 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HER801S
THRU
HER805S
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes
FEATURES
*
*
*
*
*
*
Low switching noise
Low forward voltage drop
Low thermal resistance
High current capability
High fast switching capability
High surge capability
D2PAK
.049 (1.25 REF.)
MECHANICAL DATA
*
*
*
*
*
Case: D2PAK molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 2.2 grams
.189 (4.80)
.173 (4.40)
.053 (1.35)
.049 (1.25)
.337 (8.55)
.321 (8.15)
.626 (15.89)
.578 (14.69)
.069 (1.75)
.126 (3.20)
.110 (2.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.202 (5.13)
.198 (5.03)
.412 (10.46)
.388 (9.86)
.020 (0.50)
.012 (0.30)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
C
= 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JC
C
J
T
J
, T
STG
HER801S
HER802S
HER803S
HER804S
HER805S
.098 (2.50)
.083 (2.10)
.055 (1.40)
.047 (1.20)
.036 (0.91)
.028 (0.71)
.053 (1.35)
UNITS
Volts
Volts
Volts
Amps
Amps
0
50
35
50
100
70
100
200
140
200
8.0
200
2.5
40
-55 to + 150
300
210
300
400
280
400
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 8.0A DC
o
@T
C
= 25 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
=- 0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. Suffix “R” for Reverse Polarity.
@T
C
= 100
o
C
SYMBOL
V
F
I
R
trr
HER801S
HER802S HER803S
HER804S
HER805S
o
UNITS
Volts
uAmps
nSec
2003-1
1.0
10
150
50
1.3

HER801R Related Products

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Description Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, TO-220A, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, D2PAK-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, D2PAK-3 Fixed Resistor, Thin Film, 0.8W, 280000ohm, 200V, 1% +/-Tol, 100ppm/Cel, Surface Mount, 2010, CHIP Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC, TO-220A, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, D2PAK-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-220AC, TO-220A, 2 PIN
Is it Rohs certified? conform to conform to conform to incompatible conform to conform to conform to
package instruction TO-220A, 2 PIN R-PSSO-G2 R-PSSO-G2 CHIP TO-220A, 2 PIN R-PSSO-G2 R-PSFM-T2
Reach Compliance Code compliant compliant compliant not_compliant compliant compliant compliant
Other features LOW NOISE LOW NOISE LOW NOISE ANTI-SULFUR, FLAME PROOF, NON-INDUCTIVE LOW NOISE LOW NOISE LOW NOISE
JESD-609 code e3 e3 e3 e0 e3 e3 e3
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 155 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package form FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE SMT FLANGE MOUNT SMALL OUTLINE FLANGE MOUNT
surface mount NO YES YES YES NO YES NO
Terminal surface MATTE TIN MATTE TIN MATTE TIN Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier MATTE TIN MATTE TIN MATTE TIN
Is it lead-free? Lead free Lead free Lead free - Lead free Lead free Lead free
Parts packaging code TO-220AC TO-263 TO-263 - TO-220AC TO-263 TO-220AC
Contacts 3 3 3 - 3 3 3
application EFFICIENCY EFFICIENCY EFFICIENCY - EFFICIENCY EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON - SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PSFM-T2 R-PSSO-G2 R-PSSO-G2 - R-PSFM-T2 R-PSSO-G2 R-PSFM-T2
Humidity sensitivity level 1 1 1 - 1 1 1
Maximum non-repetitive peak forward current 200 A 200 A 200 A - 200 A 200 A 200 A
Number of components 1 1 1 - 1 1 1
Phase 1 1 1 - 1 1 1
Maximum output current 8 A 8 A 8 A - 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Peak Reflow Temperature (Celsius) 265 265 265 - 265 265 265
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V 200 V 50 V - 200 V 400 V 400 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs - 0.05 µs 0.05 µs 0.05 µs
Terminal form THROUGH-HOLE GULL WING GULL WING - THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 - 1 1 -
Maker - Rectron Semiconductor Rectron Semiconductor - Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 -

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