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BS62LV256TCG70

Description
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 13.40 X 8 MM, GREEN, TSOP-28
Categorystorage    storage   
File Size307KB,10 Pages
ManufacturerBrilliance
Environmental Compliance  
Download Datasheet Parametric View All

BS62LV256TCG70 Overview

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 13.40 X 8 MM, GREEN, TSOP-28

BS62LV256TCG70 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTSOP
package instructionTSOP, TSSOP28,.53,22
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G28
length11.8 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSSOP28,.53,22
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current2e-7 A
Minimum standby current1.5 V
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.55 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
Base Number Matches1
Very Low Power CMOS SRAM
32K X 8 bit
Pb-Free and Green package materials are compliant to RoHS
BS62LV256
FEATURES
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Very low power consumption :
V
CC
= 3.0V Operation current : 25mA (Max.) at 70ns
1mA (Max.) at 1MHz
O
O
Standby current : 0.4/0.7uA(Max.) at 70 C/85 C
V
CC
= 5.0V Operation current : 40mA (Max.) at 55ns
2mA (Max.) at 1MHz
O
O
Standby current : 4/5uA (Max.) at 70 C/85 C
High speed access time :
-55
55ns(Max.) at V
CC
:
4.5~5.5V
-70
70ns(Max.) at V
CC
:
3.0~5.5V
Automatic power down when chip is deselected
Easy expansion with CE and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
DESCRIPTION
The BS62LV256 is a high performance, very low power CMOS Static
Random Access Memory organized as 32,768 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
current of 0.7uA/5uA at 3V/5V at 85 C and maximum access time of
55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62LV256 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV256 is available in DICE form, JEDEC standard 28 pin
330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP
(normal type).
O
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS62LV256DC
BS62LV256PC
BS62LV256SC
BS62LV256TC
BS62LV256PI
BS62LV256SI
BS62LV256TI
Industrial
O
O
-40 C to +85 C
5.0uA
0.7uA
2mA
20mA
40mA
1mA
15mA
25mA
Commercial
O
O
+0 C to +70 C
4.0uA
0.4uA
1.5mA
18mA
35mA
0.8mA
12mA
20mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3.0V
10MHz
f
Max.
V
CC
=5.0V
V
CC
=3.0V
1MHz
V
CC
=5.0V
10MHz
f
Max.
1MHz
DICE
PDIP-28
SOP-28
TSOP-28
PDIP-28
SOP-28
TSOP-28
PIN CONFIGURATIONS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BLOCK DIAGRAM
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
BS62LV256PC
BS62LV256PI
BS62LV256SC
BS62LV256SI
A5
A6
A7
A12
A14
A13
A8
A9
A11
Address
Input
Buffer
9
Row
Decoder
512
Memory Array
512X512
512
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
8
Data
Output
Buffer
8
64
Column Decoder
6
CE
WE
OE
V
CC
GND
A4 A3 A2 A1 A0 A10
Control
Address Input Buffer
8
Data
Input
Buffer
8
Column I/O
Write Driver
Sense Amp
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BS62LV256TC
BS62LV256TI
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
DQ7
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS62LV256
1
Revision
2.7
Oct.
2008
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