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BCP69-10T/R

Description
TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size79KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BCP69-10T/R Overview

TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power

BCP69-10T/R Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.5 V
Base Number Matches1

BCP69-10T/R Related Products

BCP69-10T/R BCP69TRL BCP69-10
Description TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 85 60
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 60 MHz 60 MHz 60 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 -
Shell connection COLLECTOR - COLLECTOR
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