CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY DIODE
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Ultra high speed switching
BAS40VPT
FEATURE
* Small surface mounting type. (SOT-563)
* High speed. (T
RR=
2.5nSec Typ.)
* Suitable for high packing density.
* Maximum total power disspation is 150mW.
(1)
(4)
SOT-563
CONSTRUCTION
* Silicon epitaxial planar
1.0±0.1
(2)
(3)
0.50
0.50
1.6±0.1
MARKING
* 2V
0.05
0.25± 0.1
1.20± 0.1
0.55±0.05
0.14±0.04
CIRCUIT
(4)
(3)
1.6± 0.1
0.05
(1)
(2)
Dimensions in millimeters
SOT-563
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1Sec.
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note 2)
Maximum Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
RR
T
J
T
STG
BAS40VPT
40
28
40
0.2
0.6
5.0
5.0
-55 to +125
-65 to +150
UNITS
Volts
Volts
Volts
Amps
Amps
pF
nSec
o
o
C
C
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
@I
F=
1.0mA
Maximum Instantaneous Forward Voltage
@I
F=
40mA
Maximum Average Reverse Current at V
R=
30V
I
R
V
F
1000
200
nAmps
SYMBOL
BAS40VPT
380
mVolts
UNITS
RATING CHARACTERISTIC CURVES ( BAS40VPT )
FIG. 1 - FORWARD CHARACTERISTICS
1
FORWARD CURRENT, (A)
100m
10m
2
=1
Ta
o
C
75
FIG. 2 - REVERSE CHARACTERISTICS
10m
REVERSE CURRENT, (A)
1m
o
Ta=125 C
100u
10u
1u
100n
10n
5
o
C
25
-2
5C
o
o
100 C
o
75 C
o
50 C
o
C
1m
100u
o
25 C
10u
0
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE, (V)
0
10
20
30
REVERSE VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
T
a
=25
o
C
f=1MHz
50
20
10
5
2
1
0
2
4
6
8
10
AVERAGE FORWARD CURRENT, (%)
100
JUNCTION CAPACITANCE , (pF)
120
100
80
60
40
20
0
FIG. 4 - TYPICAL FORWARD CURRENT
DERATING CURVE
12
14
0
25
50
75
100
125
150
REVERSE VOLTAGE, (V)
AMBIENT TEMPERATURE, (
o
C
)
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