PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
NP34N03HLD,NP34N03ILD
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
•
Channel Temperature 175 Degree Rated
•
Super Low On-state Resistance
R
DS(on)1
= 12.5 mΩ (MAX.) (V
GS
= 10 V, I
D
= 17 A)
R
DS(on)2
= 16 mΩ (MAX.) (V
GS
= 5 V, I
D
= 17 A)
•
Low C
iss
: C
iss
= 2290 pF (TYP.)
•
Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
NP34N03HLD
NP34N03ILD
PACKAGE
TO-251
TO-252
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
= 25 °C)
P
T
P
T
T
ch
T
stg
30
±20
±34
±120
1.2
51
175
–55 to + 175
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation
(T
A
Total Power Dissipation (T
ch
= 25 °C)
Channel Temperature
Storage Temperature
Note.
PW
≤
10
µ
s, Duty cycle
≤
1 %
Gate
Body
Diode
Gate
Protection
Diode
Source
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-c)
Rth(ch-a)
2.94
83.3
°C/W
°C/W
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Document No.
D14031EJ1V0PM00 (1st edition)
Date Published January 1999 NS CP(K)
Printed in Japan
©
1999
NP34N03HLD,NP34N03ILD
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
I
F
= 34 A, V
GS
= 0 V
I
F
= 34 A, V
GS
= 0 V, di/dt = 100 A/
µ
s
I
D
= 34 A, V
DD
= 24 V, V
GS
= 10 V
I
D
= 17 A, V
GS(on)
= 10 V, V
DD
= 15 V,
R
G
= 10
Ω
TEST CONDITIONS
V
GS
= 10 V, I
D
= 17 A
V
GS
= 5 V, I
D
= 17 A
V
GS
= 4 V, I
D
= 17 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 17 A
V
DS
= 60 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
2290
940
440
40
427
174
226
45
6.3
16
1.0
49
50
1.0
15
10
±10
3440
1410
690
90
1070
350
570
68
MIN.
TYP.
9.8
12
15
1.5
MAX.
12.5
16
19
2.0
UNIT
mΩ
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
R
G
= 10
V
DD
I
D
V
GS
0
90 %
90 %
I
D
TEST CIRCUIT 2 GATE CHARGE
V
GS
V
GS
Wave Form
0
10 %
V
GS(on)
90 %
D.U.T.
I
G
= 2 mA
PG.
50
R
L
V
DD
I
D
Wave Form
0
10 %
t
d(on)
t
r
t
on
t
d(off)
t
off
10 %
t
f
=1 s
Duty Cycle
1%
2
Preliminary Product Information S14031EJ1V0PM00
NP34N03HLD,NP34N03ILD
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
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