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CHDTA113ZEPT

Description
PNP Digital Silicon Transistor
CategoryDiscrete semiconductor    The transistor   
File Size180KB,3 Pages
ManufacturerCHENMKO
Websitehttp://www.chenmko.com/
Download Datasheet Parametric View All

CHDTA113ZEPT Overview

PNP Digital Silicon Transistor

CHDTA113ZEPT Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
PNP Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTA113ZEPT
CURRENT 100 mAmpere
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
Internal isolated PNP transistors in one package.
Built in bias resistor(R1=1.0kΩ, Typ. )
0.1
0.2±0.05
0.5 1.6±0.2
0.5
SC-75/SOT-416
(2)
(3)
1.0±0.1
0.1
0.3±0.05
(1)
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one
package.
0.1
0.2±0.05
0.8±0.1
MARKING
ZE1
Gnd
In
1
0.15±0.05
0.1Min.
0.6~0.9
0~0.1
1.6±0.2
CIRCUIT
2
R2
TR
R1
3
Out
Dimensions in millimeters
SC-75/SOT-416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CC
V
IN
I
O
DC Output current
I
C(Max.)
P
TOT
T
STG
T
J
J-S
Note
1. Transistor mounted on an FR4 printed-circuit board.
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
junction - soldering point
T
amb
25
O
C, Note 1
PARAMETER
Supply voltage
Input voltage
CONDITIONS
-10
−55
MIN.
MAX.
-50
+5
-100
mA
-100
150
+150
150
140
mW
O
UNIT
V
V
C
C
C/W
O
O

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