Power Bipolar Transistor, 0.8A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, TO-116, 14 PIN
| Parameter Name | Attribute value |
| Parts packaging code | DIP |
| package instruction | HERMETIC SEALED, TO-116, 14 PIN |
| Contacts | 14 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.8 A |
| Collector-emitter maximum voltage | 100 V |
| Configuration | SEPARATE, 4 ELEMENTS |
| Minimum DC current gain (hFE) | 30 |
| JEDEC-95 code | TO-116 |
| JESD-30 code | R-CDIP-T14 |
| JESD-609 code | e0 |
| Number of components | 4 |
| Number of terminals | 14 |
| Maximum operating temperature | 200 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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