CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Digital Silicon Transistor
VOL TA GE 50 Vo l t s
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTC114GMPT
CURRENT 100 m A m p er e
FEATURE
* Small surface mounting type. (SOT-723)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
Internal isolated NPN transistors in one package.
Built in bias resistor(R1=10kΩ, Typ. )
0.17~0.27
0.4 1.15~1.25
0.4
(1)
SOT-723
(3)
(2)
0.75~0.85
0.27~0.37
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
0.17~0.27
0.75~0.85
0.11~0.14
0.45~0.55
Emitter
Base
1
CIRCUIT
2
1.15~1.25
R1
TR
3
Collector
Dimensions in millimeters
SOT-723
LIMITING VALUES
In accordance with the Absolute Maximum Rating System .
SYMBOL
V
CBO
V
CEO
V
EBO
I
C(Max.)
P
D
T
STG
T
J
Rθ
J-S
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
Coll ector -Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Coll ector current
Power dissipation
Storage temperature
Junction temperature
Thermal resistance , Note 1
junction - soldering point
T
amb
≤
25
O
C, Note 1
CONDITIONS
50
50
5
100
150
−55 ∼ +150
−55 ∼ +150
140
VALUE
V
V
V
mA
mW
O
UNIT
C
O
C
C/W
O
RATING CHARACTERISTIC ( CHDTC114GMPT )
CHARA CTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SY MBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(sat)
I
CBO
I
EBO
h
FE
R
1
f
T
PARAMETER
Collector-Base breakdown voltage
Emitter-Base breakdown voltage
Collector-Emitter Saturation voltage
Collector-Base current
Emitter-Base current
DC current gain
Input resistor
Transition frequency
CONDITIONS
I
C
=50uA
I
E
=720uA
I
C
=10mA; I
B
=0.5mA
V
CB
=50V
V
EB
=4V
I
C
=5mA; V
CE
=5.0V
I
E
=-5mA, V
CE
=10.0V
f=100MHz
=
MIN.
50.0
50.0
5.0
−
−
300
30
7.0
−
−
−
−
−
−
−
−
10
250
TY P .
−
−
−
0.3
0.5
580
−
13
−
MAX.
V
V
V
V
uA
uA
KΩ
MHz
UNIT
Collector-Emitter breakdown voltage I
C
=1mA
Not e
1.Pulse test: tp≤300uS;
δ ≤
0.02.
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