CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM2108JPT
CURRENT 9.5 Ampere
FEATURE
* Small flat package. (SO-8 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1
SO-8
4.06 (0.160)
3.70 (0.146)
8
CONSTRUCTION
* N-Channel Enhancement
5.00 (0.197)
4.69 (0.185)
4
5
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
.25 (0.010)
.17 (0.007)
6.20 (0.244)
5.80 (0.228)
CIRCUIT
D1 D1 D2 D2
8
5
1
4
S1 G1 S2 G2
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM2108JPT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
20
V
V
±
20
9.5
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
35
2000
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RATING CHARACTERISTIC CURVES ( CHM2108JPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 20 V, V
GS
= 0 V
V
GS
= 12V,V
DS
= 0 V
V
GS
= -12V, V
DS
= 0 V
20
1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=4.5V, I
D
=10A
V
GS
=2.5V, I
D
=8A
0.6
11
14
16
1.3
14
20
V
m
Ω
S
Forward Transconductance
V
DS
=10V, I
D
= 10A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=
10V,
V
GS
= 0V,
f = 1.0 MHz
2800
520
380
pF
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=15V, I
D
=10A
V
GS
=5V
V
DD
= 10V
I
D
= 1.0A , V
GS
= 10 V
R
GEN
= 6
Ω
31
4.6
10
17
16
68
31
40
nC
35
33
140
60
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
(Note 2)
2.3
1.2
A
V
Drain-Source Diode Forward Voltage I
S
= 2.3A , V
GS
= 0 V
RATING CHARACTERISTIC CURVES ( CHM4808JPT )
Typical Electrical Characteristics
25
V
GS
=10,8,6,5V
50
I
D
, Drain Current (A)
15
I
D
, Drain Current (A)
20
V
GS
=4V
40
30
10
20
25 C
10
T
J
=125 C
-55 C
2
3
4
V
GS
=3V
5
0
0
1
2
3
4
0
1
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
V
GS
, Gate to Source Voltage (V)
8
6
4
2
0
0
5
10
15
20
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
10
V =15V
DS
I
D
=12A
I
D
=12A
V
GS
=10V
-50
0
50
100
150
200
Qg, Total Gate Charge (nC)
Figure
3.
Gate Charge
V
TH
, Normalized
Gate-Source Threshold Voltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
I
D
=250µA
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
-25
0
25
50
75
100
125
150
T
J
, Junction Temperature( C)
Figure 5.
Gate Threshold Variation
with Temperature
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