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CM15AD05-12H

Description
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size68KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

CM15AD05-12H Overview

Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel

CM15AD05-12H Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-XUFM-P26
Reach Compliance Codeunknown
Other features3PHASE DIODE RECTIFIER, THERMISTOR, BRAKE AND INVERTER AVAILABLE IN A MODULE
Shell connectionISOLATED
Maximum collector current (IC)15 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-P26
Number of components7
Number of terminals26
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)52 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)200 ns
Nominal on time (ton)120 ns
VCEsat-Max2.8 V
Base Number Matches1
MITSUBISHI IGBT MODULES
CM15AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
CM15AD00-12H
¡I
C .....................................................................
15A
¡V
CES ............................................................
600V
¡Insulated
Type
¡CIB
Module
3φ Inverter + 3φ Converter + Brake
Thyristor + Thermistor + Current shunt
resistor
APPLICATION
AC & DC motor controls, General purpose inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
100
90
±0.25
7.5
8
8
GT
N
P1
N1
P2
8
8
8
2.54 2.54 2.54
7.62 7.62
8
Dimensions in mm
0.8
2-φ4.5
±0.25
MOUNTING HOLES
12
EVP
GVP EWP
GWP
1
(1)
GUP
EUP
P
13
5
t=0.6
MAIN CIRCUIT TERMINAL
φ2.5
18
φ6
53
±0.5
5 5
56
φ2.5
18
φ6
R
S
7.5 8
13
4 10
PPS
PPS
0.6
t=0.6
T
B
TH1
U
V
TH2
W GB
E
GUN
GVN
GWN
2-R5
P1 GT
P2
P
CONTROL CIRCUIT TERMINAL
8
8
8
8
2.54
8
8
8
2.54
2.54
2.54
2.54
R
S
T
GUP
B
GB
GUN
EUP
GVP
EVP
GVN
GWP
EWP
GWN
90
±0.3
LABEL
N1 TH1 TH2
(sense terminal)
N U
CIRCUIT DIAGRAM
V
W
E
Sep. 2000
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