DMB53D0UV
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
Features
•
•
•
•
•
•
•
•
•
•
•
N-Channel MOSFET and NPN Transistor in One Package
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected MOSFET Gate up to 2kV
Lead, Halogen and Antimony Free, RoHS Compliant (Note
1
)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
SOT563
Q
1
D
2
B
E
Q
2
S
2
G
2
C
ESD PROTECTED TO 2kV
Top View
Bottom View
Top View
Internal Schematic
Ordering Information
(Note 3)
Part Number
DMB53D0UV-7
DMB53D0UV-13
Notes:
Case
SOT563
SOT563
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MB1 YM
MB1 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
Mar
3
2010
X
Apr
4
2011
Y
May
5
2012
Z
Jun
6
2013
A
Jul
7
2014
B
Aug
8
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMB53D0UV
Document number: DS31651 Rev. 7 - 2
1 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB53D0UV
Maximum Ratings – MOSFET, Q1
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4)
Pulsed Drain Current (Note 4)
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
50
±12
160
560
Units
V
V
mA
mA
Continuous
Maximum Ratings - NPN Transistor, Q2
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
45
6.0
100
Unit
V
V
V
mA
Thermal Characteristics, Total Device
@T
A
= 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics - MOSFET
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
Min
50
⎯
⎯
0.7
⎯
⎯
180
⎯
⎯
⎯
Typ
⎯
⎯
⎯
0.8
3.1
4
⎯
25
5
2.1
Max
⎯
10
1.0
5.0
Unit
V
μA
μA
V
Ω
mS
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 50V, V
GS
= 0V
V
GS
=
±8V,
V
DS
= 0V
V
GS
=
±12V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 80mA
V
DS
= 10V, I
D
= 100mA,
f = 1.0KHz
1.0
4
5
⎯
⎯
⎯
⎯
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
DMB53D0UV
Document number: DS31651 Rev. 7 - 2
2 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB53D0UV
Electrical Characteristics - NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Collector-Emitter Cut-Off Current
Gain Bandwidth Product
Output Capacitance
Noise Figure
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE
I
CBO
I
CBO
I
CES
f
T
C
OBO
NF
Min
50
45
6
200
—
—
580
—
—
—
100
—
—
Typ
—
—
—
290
—
700
900
660
—
—
—
—
—
—
Max
—
—
—
450
100
300
—
700
770
15
5.0
100
—
4.5
10
Unit
V
V
V
—
mV
mV
mV
nA
µA
nA
MHz
pF
dB
Test Condition
I
C
= 10μA, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 1μA, I
C
= 0
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
V
CE
= 45V
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, R
S
= 2.0kΩ,
f = 1.0kHz, BW = 200Hz
MOSFET
0.8
0.7
0.6
0.5
V
GS
= 3.0V
V
GS
= 10V
0.5
V
DS
= 10V
0.4
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
T
A
= 85°C
T
A
= 25°C
0.3
T
A
= -55°C
T
A
= 150°C
T
A
= 125°C
0.4
0.3
0.2
0.1
0
0
0.5
1
V
GS
= 1.5V
V
GS
= 1.0V
V
GS
= 2.5V
0.2
0.1
0
5
1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
1
2
3
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4
DMB53D0UV
Document number: DS31651 Rev. 7 - 2
3 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB53D0UV
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
10
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
V
GS
= 2.5V
T
A
= 25°C
V
GS
= 4.0V
T
A
= -55°C
1
0.001
1
0
0.2
0.3
0.4
0.5
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.1
0.01
0.1
I
D
, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1
2.0
1.8
R
DS(ON)
, DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
V
GS
= 4V
I
D
= 100mA
35
30
C, CAPACITANCE (pF)
25
20
f = 1MHz
C
iss
V
GS
= 2.5V
I
D
= 80mA
15
10
5
0
0
V
GS
= 0V
C
oss
C
rss
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
40
1.1
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.0
I
S
, SOURCE CURRENT (A)
1
0.1
0.9
I
D
= 250µA
T
A
= 150°C
0.8
0.01
T
A
= 125°C
T
A
= 85°C
0.7
0.001
T
A
= 25°C
T
A
= -55°C
0.6
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.5
-50
0.0001
0.1
0.3
0.5
0.7
0.9
1.1
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMB53D0UV
Document number: DS31651 Rev. 7 - 2
4 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB53D0UV
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
R
θJA
= 500
°
C/W
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 9 Derating Curve - Total Package Power Dissipation
0
-50
NPN Transistor
1,000
T
A
= 150
°
C
T
A
= 25
°
C
0.4
I
C
I
B
= 20
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
h
FE,
DC CURRENT GAIN
0.3
100
T
A
= -50
°
C
0.2
T
A
= 150°C
T
A
= 25°C
10
0.1
T
A
= -50°C
1
100
1,000
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 10 Typical DC Current Gain vs. Collector Current
1
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
0
0.1
1,000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 11 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
100
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 12 Typical Gain-Bandwidth Product
vs. Collector Current
100
DMB53D0UV
Document number: DS31651 Rev. 7 - 2
5 of 7
www.diodes.com
March 2012
© Diodes Incorporated
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