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2SA1386

Description
RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size147KB,4 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
Download Datasheet Parametric Compare View All

2SA1386 Overview

RF POWER TRANSISTOR

2SA1386 Parametric

Parameter NameAttribute value
stateActive
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1386 2SA1386A
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SC3519/3519A
APPLICATIONS
・Audio
and general purpose
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2SA1386
V
CBO
Collector-base voltage
2SA1386A
2SA1386
V
CEO
Collector-emitter voltage
2SA1386A
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-180
-5
-15
-4
130
150
-55~150
V
A
A
W
Open emitter
-180
-160
V
CONDITIONS
VALUE
-160
V
UNIT

2SA1386 Related Products

2SA1386 2SA1386A
Description RF POWER TRANSISTOR RF POWER TRANSISTOR
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