JMnic
Product Specification
Silicon PNP Power Transistors
2SA1988
DESCRIPTION
・With
TO-3PN package
・High
collector-emitter voltage
APPLICATIONS
・For
audio frequency power amplifier
and industrial use
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-200
-200
-5
-7
-10
100
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-5A; I
B
=-0.5A
I
C
=-5A; I
B
=-0.5A
V
CB
=-200V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-3.5A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V,f=1MHz
I
C
=-1A ; V
CE
=-5V
70
20
270
40
MIN
TYP.
-0.6
-1.3
2SA1988
MAX
-2.0
-2.0
-50
-50
200
UNIT
V
V
μA
μA
pF
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1988
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1988
4