JMnic
Product Specification
Silicon PNP Power Transistors
2SA743 2SA743A
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC1212/1212A
APPLICATIONS
・For
low frequency power amplifier
applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SA743
V
CBO
Collector-base voltage
2SA743A
2SA743
V
CEO
Collector- emitter voltage
2SA743A
V
EBO
I
C
Emitter-base voltage
Collector current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
8
150
-55½+150
℃
℃
Open collector
Open base
-80
-4
-1
0.75
W
V
A
Open emitter
-80
-50
V
CONDITIONS
VALUE
-50
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA743
I
C
=-10mA ;R
BE
=∞
2SA743A
2SA743
I
C
=-1mA ;I
E
=0
2SA743A
I
E
=-1mA ;I
C
=0
I
C
=-1A ;I
B
=-0.1A
I
C
=-50mA ; V
CE
=-4V
2SA743
2SA743A
V
CE
=-50V; R
BE
=1kΩ
V
CE
=-80V; R
BE
=1kΩ
I
C
=-50mA ; V
CE
=-4V
I
C
=-1A ; V
CE
=-4V
I
C
=-30mA ; V
CE
=-4V
CONDITIONS
2SA743 2SA743A
MIN
-50
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-80
-50
V
-80
-4
-0.75
-0.65
-1.5
-1.0
-20
-20
60
20
120
MHz
200
V
V
V
μA
μA
V
(BR)CBO
Collector-base
breakdown voltage
V
(BR)EBO
V
CEsat
V
BE
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
I
CER
Collector
cut-off current
h
FE-1
h
FE-2
f
T
DC current gain
DC current gain
Transition frequency
h
FE-1
Classifications
B
60-120
C
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA743 2SA743A
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA743 2SA743A
4
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