JMnic
Product Specification
Silicon PNP Power Transistors
2SA907/908/909
DESCRIPTION
・With
TO-3 package
・Complement
to type 2SC1584/1585/1586
APPLICATIONS
・For
power switching and general purpose
applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2SA907
V
CBO
Collector-base voltage
2SA908
2SA909
2SA907
V
CEO
Collector-emitter voltage
2SA908
2SA909
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-100
-150
-200
-100
-150
-200
-6
-15
-5
150
150
-65~150
V
A
A
W
℃
℃
V
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA907
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA908
2SA909
V
CEsat
Collector-emitter saturation voltage
2SA907
I
CBO
Collector cut-off current
2SA908
2SA909
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
I
C
=-10A; I
B
=-1A
V
CB
=-100V; I
E
=0
V
CB
=-150V; I
E
=0
V
CB
=-200V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-5A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-12V
I
C
=-50mA ;I
B
=0
CONDITIONS
2SA907/908/909
MIN
-100
-150
-200
TYP.
MAX
UNIT
V
-3.0
V
-1.0
mA
-1.0
30
10
mA
MHz
2
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