Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3
| Parameter Name | Attribute value |
| Parts packaging code | TO-92 |
| package instruction | CYLINDRICAL, O-PBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Other features | FAST |
| Maximum collector current (IC) | 0.32 A |
| Collector-emitter maximum voltage | 500 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JESD-30 code | O-PBCY-W3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 125 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | MATTE TIN |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| ZCN9150ASTOE | ZCN9150ASTOF | ZCN9150ASTZ | ZCN9150ASTOB | ZCN9150ASTOA | |
|---|---|---|---|---|---|
| Description | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Insulated Gate Bipolar Transistor, 0.32A I(C), 500V V(BR)CES, N-Channel, TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| Parts packaging code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| package instruction | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 |
| Contacts | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| Other features | FAST | FAST | FAST | FAST | FAST |
| Maximum collector current (IC) | 0.32 A | 0.32 A | 0.32 A | 0.32 A | 0.32 A |
| Collector-emitter maximum voltage | 500 V | 500 V | 500 V | 500 V | 500 V |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| JESD-30 code | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
| JESD-609 code | e3 | e3 | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal surface | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | 40 | 40 | 40 | 40 | 40 |
| transistor applications | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | - | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
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