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NAND1282R4A2AV1E

Description
Flash, 8MX16, 10000ns, PDSO48, 12 X 17 MM, LEAD FREE, PLASTIC, WSOP-48
Categorystorage    storage   
File Size871KB,56 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND1282R4A2AV1E Overview

Flash, 8MX16, 10000ns, PDSO48, 12 X 17 MM, LEAD FREE, PLASTIC, WSOP-48

NAND1282R4A2AV1E Parametric

Parameter NameAttribute value
Parts packaging codeSOIC
package instruction12 X 17 MM, LEAD FREE, PLASTIC, WSOP-48
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time10000 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee4
length15.4 mm
memory density134217728 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height0.65 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceNICKEL PALLADIUM GOLD
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNAND TYPE
width12 mm
Base Number Matches1
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
PRELIMINARY DATA
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage
applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: V
DD
= 1.7 to 1.95V
– 3.0V device: V
DD
= 2.7 to 3.6V
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM MODE
– Internal Cache Register to improve the
program throughput
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
SERIAL NUMBER OPTION
Figure 1. Packages
TSOP48 12 x 20mm
WSOP48 12 x 17mm
FBGA
VFBGA55 8 x 10 x 1mm
VFBGA63 8.5 x 15 x 1mm
TFBGA63 8.5 x 15 x 1.2mm
HARDWARE DATA PROTECTION
– Program/Erase locked during Power
transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
DEVELOPMENT TOOLS
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
April 2004
1/56
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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