UPC8178TB-E3-A datasheet, PDF - EEWORLD Datasheet

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UPC8178TB-E3-A: DescriptionWide Band Low Power Amplifier, 100MHz Min, 2400MHz Max, MINI, PLASTIC, SO-6; CategoryWireless rf/communication Radio frequency and microwave; File Size63KB，6 Pages; ManufacturerNEC Electronics; Environmental Compliance

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UPC8178TB-E3-A Overview

Wide Band Low Power Amplifier, 100MHz Min, 2400MHz Max, MINI, PLASTIC, SO-6

UPC8178TB-E3-A Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	9 dB
Maximum input power (CW)	5 dBm
JESD-609 code	e6
Maximum operating frequency	2400 MHz
Minimum operating frequency	100 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Terminal surface	Tin/Bismuth (Sn/Bi)
Base Number Matches	1

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SILICON RFIC

LOW CURRENT AMPLIFIER

FOR MOBILE COMMUNICATIONS

FEATURES

LOW CURRENT CONSUMPTION

= 1.9 mA TYP @ V

= 3.0 V

• SUPPLY VOLTAGE:

= 2.4 to 3.3 V

• EXCELLENT ISOLATION:

ISOL = 39 dB TYP @ f = 1.0 GHz

ISOL = 40 dB TYP @ f = 1.9 GHz

ISOL = 38 dB TYP @ f = 2.4 GHz

• POWER GAIN:

= 11.0 dB TYP @ f = 1.0 GHz

= 11.5 dB TYP @ f = 1.9 GHz

= 11.5 dB TYP @ f = 2.4 GHz

• OPERATING FREQUENCY:

0.1 to 2.4 GHz (Output port LC matching)

• 1 dB GAIN COMPRESSION OUTPUT POWER:

O(1 dB)

= -4.0 dBm TYP @ f = 1.0 GHz

O(1 dB)

= -7.0 dBm TYP @ f = 1.9 GHz

O(1 dB)

= -7.5 dBm TYP @ f = 2.4 GHz

• HIGH-DENSITY SURFACE MOUNTING:

6-pin super minimold package (2.0 x 1.25 x 0.9 mm)

LOW WEIGHT:

7 mg (Standard Value)

+20

UPC8178TB

POWER GAIN vs. FREQUENCY

= 3.0 V

1.0 GHz

+10

= -40¡C

= +25¡C

= +85¡C

2.4 GHz

-10

-20

1.9 GHz

-30

-40

0.1

0.3

1.0

3.0

DESCRIPTION

The UPC8178TB is a silicon monolithic integrated circuit

designed as an amplifier for mobile communications. This IC

can realize low current consumption with an external chip

inductor which cannot be realized on an internal 50 wideband

matched IC. This low current amplifier operates on 3.0 V. This

device is manufactured using NEC's 30 GHz fmax UHS0 (Ultra

High Speed Process) silicon bipolar process which uses direct

silicon nitride passivation film and gold electrodes. These

materials can protect the chip surface from pollution and

prevent corrosion/migration. Thus, this IC has excellent perfor-

mance, uniformity and reliability.

NEC's stringent quality assurance and test procedures ensure

the highest reliability and performance.

APPLICATIONS

¥ Buffer Amplifiers on 0.1 to 2.4 GHz mobile

communications system

ELECTRICAL CHARACTERISTICS

PART NUMBER

PACKAGE OUTLINE

SYMBOLS

Power Gain

ISOL

Isolation

O(1dB)

1 dB Gain Compression Output Power

Noise Figure

RLin

Input Return Loss

f = 1.0 GHz

f = 1.9 GHz

f = 2.4 GHz

f = 1.0 GHz

f = 1.9 GHz

f = 2.4 GHz

PARAMETERS AND CONDITIONS

Circuit Current (no signal)

f = 1.0 GHz

f = 1.9 GHz

f = 2.4 GHz

f = 1.0 GHz

f = 1.9 GHz

f = 2.4 GHz

= 25¡C, V

= V

OUT

= 3.0 V, Z

= Z

= 50 , at LC matched frequency unless otherwise specified))

UPC8178TB

S06

UNITS

dBm

MIN

1.4

9.0

-8.0

-11.0

-11.5

6.5

TYP

1.9

11.0

11.5

-4.0

-7.0

-7.5

5.5

9.5

MAX

2.4

13.0

13.5

7.0

f = 1.0 GHz

f = 1.9 GHz

f = 2.4 GHz

California Eastern Laboratories

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