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DG1E60

Description
0.8 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size399KB,2 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
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DG1E60 Overview

0.8 A, SILICON, SIGNAL DIODE

DG1E60 Parametric

Parameter NameAttribute value
package instructionR-PDSO-F2
Contacts2
Manufacturer packaging codeG1F
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
Rectifier Diode
面実装デバイス 単½型
Surface Mounting Device Single Diode
DG1E60
600V 1A
特長
• 小型 SMD
• 耐湿性に優れ高信頼
• 静電気耐性に優れている
■外観図 OUTLINE
Package:G1F
Unit : mm
Weight : 0.011g typ.)
品名略号
Type No.
3.5
ロッ
ト記号
(例)
Date code
1.6
F 78
カ ドマーク
½ー
Cathode mark
Feature
• Small SMD
• High-Reliability
• High ESD Capability
0.8
外½図については新電元 Web サイト又は〈半導½½品一覧表〉をご参照下
さい。捺印表示については捺印仕様をご確認下さい。
■定格表 RATINGS
項  目
Item
保存温度
Storage Temperature
接合部温度
Operation Junction Temperature
せん頭逆電圧
Maximum Reverse Voltage
記号
条 件
Symbol Conditions
T
stg
T
j
V
RM
Ta = 26℃ *
1
50Hz 正弦波,抵抗負荷
50Hz sine wave, Resistance load
品 名
Type No.
DG1E60
−55∼175
175
600
0.8
1.0
1.0
25
単½
Unit
V
出力電流
Average Rectified Forward Current
I
O
Ta = 63℃ *
2
Tl = 156℃ *
3
A
せん頭サージ順電流
Peak Surge Forward Current
I
FSM
50Hz 正弦波,非繰り返し1サイクルせん頭値,Tj = 25℃
50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25℃
A
順電圧
Forward Voltage
逆電流
Reverse Current
静電気耐性
Electrostatic Discharge Capability
V
F
I
R
V
ESD
θja
θjl
I
F =
1A,
V
R =
600V,
C
=
150pF,
パルス測定
Pulse measurement
パルス測定
Pulse measurement
極性±,気中放電
R
=
150Ω,
Polarity±, Aerial discharge
MAX
MAX
0.97
10
25
210
120
20
V
μA
kV
*
4
*
1
*
2
*
3
TYP
MAX
MAX
MAX
熱抵抗
Thermal Resistance
接合部・周囲間
Junction to ambient
接合部・リード間
Junction to lead
℃/W
2
*
1:ガラエポ基板実装(1インチ基板)銅箔パターン総面積32.6mm
area: 32.6mm
2
Measured on the 1x1 inch On glass-epoxi substrate(pattern
*
2:ガラエポ基板実装(1インチ基板)銅箔パターン総面積160mm
2
160mm
2
Measured on the 1x1 inch On glass-epoxi substrate(pattern area:
*
3:アルミナ基板実装(2インチ基板)銅箔パターン総面積2100mm
Measured on the 2x2 inch alumina substrate(pattern area: 2100mm
2
*
4:IEC-61000-4-2規定に準拠
It is based on IEC-61000-4-2
2
182
(J534)
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