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DN3545N3-GP014

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size829KB,6 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric Compare View All

DN3545N3-GP014 Overview

SMALL SIGNAL, FET

DN3545N3-GP014 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
Reach Compliance Codecompliant
Other featuresHIGH INPUT IMPEDANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage450 V
Maximum drain current (ID)0.136 A
Maximum drain-source on-resistance20 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)15 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.74 W
Maximum power dissipation(Abs)0.74 W
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FET
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN3545
General Description
Applications
These depletion-mode (normally-on) transistors utilize an
advanced vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Part Number
SN3545N3-G
SN3545N3-G P002
SN3545N3-G P003
SN3545N3-G P005
SN3545N3-G P013
SN3545N3-G P014
SN3545N8-G
Package Options
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-243AA (SOT-89)
Packing
1000/Bag
2000/Reel
2000/Reel
2000/Reel
2000/Reel
2000/Reel
2000/Reel
Product Summary
BV
DSX
/BV
DGX
450V
R
DS(ON)
(max)
20Ω
I
DSS
(min)
200mA
Pin Configuration
DRAIN
DRAIN
SOURCE
GATE
SOURCE
DRAIN
GATE
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92 Taping
Specifications and Winding Styles
TO-92
TO-243AA (SOT-89)
Product Marking
S i DN
3 5 4 5
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92
DN5MW
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
Package may or may not include the following marks: Si or
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89)
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Typical Thermal Resistance
Package
TO-92
TO-243AA (SOT-89)
θ
ja
132
O
C/W
133
O
C/W
Doc.# DSFP-DN3545
C070113
Supertex inc.
www.supertex.com

DN3545N3-GP014 Related Products

DN3545N3-GP014 DN3545N3-GP002 DN3545N3-GP003 DN3545N3-GP005 DN3545N3-GP013
Description SMALL SIGNAL, FET SMALL SIGNAL, FET SMALL SIGNAL, FET SMALL SIGNAL, FET SMALL SIGNAL, FET
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Microchip Microchip Microchip Microchip Microchip
Reach Compliance Code compliant compliant compliant compliant compliant
Other features HIGH INPUT IMPEDANCE HIGH INPUT IMPEDANCE HIGH INPUT IMPEDANCE HIGH INPUT IMPEDANCE HIGH INPUT IMPEDANCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 450 V 450 V 450 V 450 V 450 V
Maximum drain current (ID) 0.136 A 0.136 A 0.136 A 0.136 A 0.136 A
Maximum drain-source on-resistance 20 Ω 20 Ω 20 Ω 20 Ω 20 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 15 pF 15 pF 15 pF 15 pF 15 pF
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 0.74 W 0.74 W 0.74 W 0.74 W 0.74 W
Maximum power dissipation(Abs) 0.74 W 0.74 W 0.74 W 0.74 W 0.74 W
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1
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