PO3B14A
4:1 Mux/DeMux with Single Enable
High Bandwidth Potato Chip
10/09/07
FEATURES:
• Patented technology
• High signal -3db passing bandwidth at 1.2GHz
• Near-Zero propagation delay
• VCC = 1.65V to 3.6V
• Ultra-Low Quiescent Power: 0.1µA typical
• Ideally suited for low power applications
• Industrial operating temperature: -40°C to +85°C
• Available in 16pin 150mil wide QSOP package
• Available in 16pin 173mil wide TSSOP package
DESCRIPTION:
Potato Semiconductor’s PO3B14A is
designed for world top performance using
submicron CMOS technology to achieve GHz
high bandwidth.
The PO3B14A is a 2-channel, 4:1 Multiplexer /
Demultiplexer with 3-state outputs. The switch
introduces no additional ground bounce noise or
propagation delay.
Pin Configuration
EN
S
1
A
3
A
2
A
1
A
0
Y
A
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Block Diagram
V
CC
N.C.
S
0
B
3
B
2
B
1
B
0
Y
B
YA
YB
A0
A1
A2
A3
B0
B1
B2
B3
EN
S0
S1
Pin Description
Pin Name
A
N
, B
N
S
0-1
EN
Y
A
to Y
B
GND
V
CC
Data Inputs
Select Inputs
Enable
Data Outputs
Ground
Power
Description
Truth Table
Enable
EN
H
L
L
L
L
X
L
L
H
H
Select
S
1
S
0
X
L
H
L
H
Y
Hi-Z
I0
I1
I2
I3
Function
Disable
S1-0 = 0
S1-0 = 1
S1-0 = 2
S1-0 = 3
1
Copyright
© Potato Semiconductor Corporation
PO3B14A
4:1 Mux/DeMux with Single Enable
High Bandwidth Potato Chip
03/08/08
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Note:
Stresses greater than those listed under
MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating
only and functional operation of the device at
these or any other conditions above those
indicated in the operational sections of this
specification
is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Storage Temperature ................................................ –65°C to +150°C
Ambient Temperature with Power Applied ............... –40°C to +85°C
Supply Voltage to Ground Potential ........................... –0.5V to +4.6V
DC Input Voltage ........................................................ –0.5V to +Vcc
DC Output Current................................................................... 120mA
Power Dissipation ....................................................................... 0.5W
(Over the Operating Range, T
A
= –40°C to +85°C, V
CC
= 3.3V ±10%)
Parameters
V
IH
V
IL
I
IH
I
IL
I
OZH
R
ON
Description
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
Input LOW Current
DC Electrical Characteristics, 3.3V Supply
Test Conditions
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max., V
IN
= V
CC
V
CC
= Max., V
IN
= GND
V
CC
= Min., V
IN
= 0.0V,
Switch On-Resistance
I
ON
= -48 mA or -64mA
V
CC
= Min., V
IN
= V
CC
, I
ON
= -15 mA
Min.
2.0
0.8
±1
±1
±1
14
16
18
20
Ω
µA
Typ.
Max.
Units
V
High Impedance Output Current
0
≤
Y, In
≤
V
CC
(Over Operating Range, T
A
= –40°C to +85°C, V
CC
= 2.5V ± 10%)
Parameters
V
IH
V
IL
I
IH
I
IL
I
OZH
R
ON
Description
Input HIGH Voltage
Inout LOW Voltage
Input HIGH Current
Input LOW Current
High Impedance Current
Switch On Resistance
DC Electrical Characteristics, 2.5V Supply
Test Conditions
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max., V
IN
= V
CC
V
CC
= Max., V
IN
= GND
0
≤
Y,
In
≤
V
CC
V
CC
= Min., V
IN
= 0.0V,
I
ON
= –48mA
V
CC
= Min., V
IN
= 2.25V,
I
ON
= -15mA
18
18
Min.
1.8
–0.3
Typ.
Max.
V
CC
+ 0.3
0.8
±1
±1
±1
22
Ω
22
µA
Units
V
2
Copyright
© Potato Semiconductor Corporation
PO3B14A
4:1 Mux/DeMux with Single Enable
High Bandwidth Potato Chip
10/09/07
Power Supply Characteristics
Symbol
Description
Quiescent Power Supply Current
Test Conditions (1)
Vcc=Max, Vin=Vcc or GND
Min
Typ
Max
Unit
Icc
Notes:
1.
2.
3.
4.
5.
-
0.1
3
uA
For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
Typical values are at Vcc = 3.3V, 25°C ambient.
This parameter is guaranteed but not tested.
Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
VoH = Vcc – 0.6V at rated current
Capacitance
Parameters
C
IN
C
OFF(IN)
C
OFF(Y)
C
ON
Notes:
(T
A
= 25°C f = 1 MHz)
Description
Input Capacitance
In Capacitance, Switch Off
Y Capacitance, Switch Off
Y/In Capacitance, Switch On
V
IN
= 0V
Test Conditions
Typ.
3.0
3.5
6.5
10.0
pF
Units
1 This parameter is determined by device characterization but not production tested.
Dynamic Electrical Characteristics Over the Operating Range
(T
A
= -40º to +85º, V
CC
= 3.3V ± 10%)
Parameter
X
TALK
O
IRR
BW
Description
Crosstalk
Off-Isolation
-3dB Bandwidth
Test Condition
R
L
= 100Ω
R
L
= 100Ω
R
L
= 100Ω
Typ.
-60
-60
1.2
Units
dB
GHz
Switching Characteristics over 3.3V Operating Range
Parameters
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Description
Propogation Delay
Bus Enable Time
See Test Diagram
Bus Disable Time
3.0
Conditions
See Test Diagram
Max.
0.3
2.0
ns
Units
3
Copyright
© Potato Semiconductor Corporation
PO3B14A
4:1 Mux/DeMux with Single Enable
High Bandwidth Potato Chip
10/09/07
Switching Characteristics over 2.5V Operating Range
Parameters
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Description
Propogation Delay
Bus Enable Time
See Test Diagram
Bus Disable Time
3.0
Conditions
See Test Diagram
Max.
0.3
2.0
ns
Units
Test Circuit for Electrical Characteristics
6.0V
V
CC
Switch Positions
Test
t
PLZ
, t
PZL
t
PHZ
, t
PZH
Prop Delay
Switch
6.0V
GND
Open
200-ohm
Pulse
Generator
V
IN
V
OUT
D.U.T
R
T
10pF
C
L
200-ohm
Switching Waveforms
SEL
2.5V
1.25V
tPZL
VDD/2
1.25V
0V
Output
tPLZ
VOL +0.3V
tPHZ
VDD/2
Output
VOH –0.3V
VOH
VOL
VOH
VOL
3.5V
Input
t
PLH
Output
2.5V
2.5V
2.5V
1.5V
t
PHL
V
OH
2.5V
V
OL
tPZH
Voltage Waveforms Propagation Delay Times
Voltage Waveforms Enable and Disable Times
4
Copyright
© Potato Semiconductor Corporation
PO3B14A
4:1 Mux/DeMux with Single Enable
High Bandwidth Potato Chip
10/09/07
Packaging Mechanical Drawing: 16 pin QSOP
Packaging Mechanical Drawing: 16 pin TSSOP
5
Copyright
© Potato Semiconductor Corporation
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