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BC69PAS

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size878KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BC69PAS Overview

Small Signal Bipolar Transistor

BC69PAS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSMALL OUTLINE, S-PDSO-N3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeS-PDSO-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Polarity/channel typePNP
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
Base Number Matches1
BC69PAS series
20 V, 2 A PNP medium power transistors
Rev. 1 — 19 June 2015
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small
Surface-Mounted Device (SMD) plastic package with medium power capability and visible
and solderable side pads.
NPN complement: BC68PAS series
1.2 Features and benefits
High collector current capability
Three current gain selections
I
C
and I
CM
Reduced Printed-Circuit Board (PCB)
Leadless very small SMD plastic
area requirements
package with medium power capability
Exposed heat sink for excellent thermal
Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol
V
CEO
I
C
I
CM
h
FE
Parameter
Conditions
Min
-
-
single pulse; t
p
1 ms
V
CE
=
1
V; I
C
=
500
mA
V
CE
=
1
V; I
C
=
500
mA
V
CE
=
1
V; I
C
=
500
mA
[1]
[1]
[1]
Typ
-
-
-
-
-
-
Max Unit
20
2
3
375
250
375
V
A
A
collector-emitter voltage open base
collector current
peak collector current
DC current gain
h
FE
selection -16
h
FE
selection -25
-
85
100
160
[1]
Pulse test: t
p
300 ms;
 
0.02.

BC69PAS Related Products

BC69PAS BC69-16PAS BC69-25PAS
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Is it Rohs certified? conform to conform to conform to
Maker Nexperia Nexperia Nexperia
package instruction SMALL OUTLINE, S-PDSO-N3 SMALL OUTLINE, S-PDSO-N3 SMALL OUTLINE, S-PDSO-N3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 2 A 2 A 2 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 100 160
JESD-30 code S-PDSO-N3 S-PDSO-N3 S-PDSO-N3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE SQUARE
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
Guideline AEC-Q101; IEC-60134 AEC-Q101; IEC-60134 AEC-Q101; IEC-60134
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz 140 MHz
Base Number Matches 1 1 1
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